planar die construction ultra-small surface mount package general purpose ideally suited for automated assembly processes maximum ratings characteristic symbol value unit forward voltage (note 1) @ i f = 10ma v f 0.9 v power dissipation p d 200 mw thermal resistance, junction to ambient air r ja 625 c/w operating and storage temperature range t j, t stg -65 to +150 c notes: 1. short duration pulse test used to minimize self-heating effect. case: sod-323, plastic case material - ul flammability classification rating 94v-0 polarity: cathode band weight: 0.004 grams (approx.) mmsz 52 21b s - mmsz5259b s 2 00mw surface mount zener diode ? ? ? ? ? ? ? ? features m echani cal d ata maximum ratings and electrical characteristics rating at 25 o c ambient temperature unle ss otherwise specified. sod-323 dimensions in inches and (millimeters) http://www.luguang.cn mail:lge@luguang.cn
electrical characteristics notes: 1. short duration test pulse used to minimize self-heating effect. 2. f = 1khz. type number marking code zener voltage range (note 1) test current maximum zener impedance (note 2) maximum reverse leakage current (note 1) v z @ i zt i zt z zt @ i zt z zk @ i zk = 0.25ma i r @v r nom (v) min (v) max (v) ma a v mmsz5221bs c1 2.4 2.28 2.52 20 30 1200 100 1.0 mmsz5223bs c3 2.7 2.57 2.84 20 30 1300 75 1.0 mmsz5225bs c5 3.0 2.85 3.15 20 30 1600 50 1.0 mmsz5226bs g1 3.3 3.14 3.47 20 28 1600 25 1.0 mmsz5227bs g2 3.6 3.42 3.78 20 24 1700 15 1.0 mmsz5228bs g3 3.9 3.71 4.10 20 23 1900 10 1.0 mmsz5229bs g4 4.3 4.09 4.52 20 22 2000 5.0 1.0 mmsz5230bs g5 4.7 4.4 7 4.94 20 19 1900 5.0 2.0 mmsz5231bs e1 5.1 4.85 5.36 20 17 1600 5.0 2.0 mmsz5232bs e2 5.6 5.32 5.88 20 11 1600 5.0 3.0 MMSZ5233BS e3 6.0 5.70 6.30 20 7 1600 5.0 3.5 mmsz5234bs e4 6.2 5.89 6.51 20 7 1000 5.0 4.0 mmsz5235bs e5 6.8 6.46 7.14 20 5 750 3.0 5.0 mmsz5236bs f1 7.5 7.13 7.88 20 6 500 3.0 6.0 mmsz5237bs f2 8.2 7.79 8.61 20 8 500 3.0 6.5 mmsz5238bs f3 8.7 8.27 9.14 20 8 600 3.0 6.5 mmsz5239bs f4 9.1 8.65 9.56 20 10 600 3.0 7.0 mmsz5240bs f5 10 9.50 10.50 20 17 600 3.0 8.0 mmsz5241bs h1 11 10.45 11.55 20 22 600 2.0 8.4 mmsz5242bs h2 12 11.40 12.60 20 30 600 1.0 9.1 mmsz5243bs h3 13 12.35 13.65 9.5 13 600 0.5 9.9 mmsz5245bs h5 15 14.25 15.75 8.5 16 600 0.1 11 mmsz5246bs j1 16 15.20 16.80 7.8 17 600 0.1 12 mmsz5248bs j3 18 17.10 18.90 7.0 21 600 0.1 14 mmsz5250bs j5 20 19.00 21.00 6.2 25 600 0.1 15 mmsz5251bs k1 22 20.90 23.10 5.6 29 600 0.1 17 mmsz5252bs k2 24 22.80 25.20 5.2 33 600 0.1 18 mmsz5254bs k4 27 25.65 28.35 5.0 41 600 0.1 21 mmsz5255bs k5 28 26.60 29.40 4.5 44 600 0.1 21 mmsz5256bs m1 30 28.50 31.50 4.2 49 600 0.1 23 mmsz5257bs m2 33 31.35 34.65 3.8 58 700 0.1 25 mmsz5258bs m3 36 34.20 37.80 3.4 70 700 0.1 27 mmsz5259bs m4 39 37.05 40.95 3.2 80 800 0.1 30 mmsz 52 21b s - mmsz5259b s 2 00mw surface mount zener diode http://www.luguang.cn mail:lge@luguang.cn
0 10 20 30 0 i , zener current (ma) z v , zener voltage (v) z fig. 6 zener breakdown characteristics 10 20 30 4 0 t = 25c j test current i z 10 12 18 22 27 33 36 15 39 nominal zener voltage 0 10 20 30 40 50 01 2 3 4 5 6 7 8910 i , zener current (ma) z v , zener voltage (v) z fi g . 5 zener breakdown characteristics t = 25c j 5v6 6v8 8v2 te s t c u r r e n t i z 20ma 1 10 100 1 10 100 p ,peaksurgep o wer (w) pk pulse width (ms) fig. 4 maximum non-repetitive surge power 100 0 1 10 100 1000 11 01 0 0 v , nominal zener voltage (v) z fi g . 3 zener impedance vs. zener volta g e i = 1.0ma z 1 10 100 1000 1 10 100 c,t o tal capacitance (pf) t v , nominal zener voltage (v) z fig. 2 typical capacitance 0v bias f = 1mhz 0 0.1 0.2 0.3 0.4 25 0 50 75 100 125 150 p,p o wer dissipati o n(w) d t , ambient temperature ( c) a fig. 1 power dissipation vs ambient temperature mmsz5221bs-mmsz5259bs 200mw surface mount zener diode
|
